PMOS / P-Channel MOSFET

Logic Level PMOS

Summary

Orient the P-Channel MOSFET (PMOS) in a circuit so that the drain pin (D) is connected to the supply positive, and the source pin (S) is connected to the load positive.   Voltage up to the Vdss Drain-Source Voltage and current up to the lesser of the Id Drain Current and the Is Maximum Continuous Drain-Source Diode Forward Current will be conducted from the drain to the source when the PMOS gate pin sees a voltage more negative than the 'On Characteristic' Vgs(th) Gate Threshold Voltage maximum value.   Reverse voltages greater than the Vsd Drain-Source Diode Forward Voltage value (the more negative value when looking at the difference of Vg and Vd) will be blocked by the built-in body diode.   Use it to add reverse polarity protection, or to switch high side loads up to 60V @ 20 A.  

Detailed Explanation

Pay careful attention to the orientation of the PMOS in a circuit.   A PMOS has a body diode that conducts current under forward-bias conditions (current traveling from the drain to the source).  

The FQP27P06 PMOS for example, has a maximum Drain-Source Diode Forward Voltage (Vsd) of -4 V, and a Maximum Continuous Drain-Source Diode Forward Current of -27 A.   Any reverse voltage more negative than -4 V won't be conducted from the drain to the source (source +, drain -) due to this diode.   For example, in a reverse polarity situation where the drain is connected to ground and the source is connected to +4 VDC or more (properly stimulating the PMOS gate), the result will be no current flow between the PMOS source and drain pins (but it would for +3.3 V at the source).  

The FQP27P06 PMOS Vgs(th) gate threshold voltage is rated at -2.0 minimum and -4.0 V maximum.   This means that the difference of the gate voltage and the drain must be more negative than -4.0 V in order for the PMOS to conduct current flow from the drain to the source.   For a 5 VDC power supply with the + connected to the PMOS drain and a 10 kOhm resistor pulling the PMOS gate to ground, the difference of the gate voltage relative to the drain would be Vg - Vd = 0.0 V - 4.99 V = -4.99 V (-4.99 V because of the 10 kOhm resistor and the small 0.07 ohm resistance of the PMOS in the circuit).   Note that since the gate threshold voltage is -2.0 V minimum, and -4.0 V maximum, a voltage of -3.3V at the gate is not recommended for reliable stimulation of the gate.

The TP2535 has a Vgs th - Gate-Source Threshold Voltage of 2.4V and therefore can provide reverse polarity protection down to 3.3 V.  

 

Reverse Polarity Protection Application Example

 

High Side Switching Application

The two circuits below us a N-Channel MOSFET (NMOS) to control the gate of a P-Channel MOSFET (PMOS).   The gate on the NMOS is controled by a 3.3 or 5V logic microcontroller and only demands about 2 mA of current from the MCU digital output.   The PMOS can switch up to 60 VDC @ 20 A (with proper heat sink).  

 

 

 


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The information presented on this website is for the author's use only.   Use of this information by anyone other than the author is offered as guidelines and non-professional advice only.   No liability is assumed by the author or this web site.  

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